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November 2013
FCA22N60N
N-Channel SupreMOS ? MOSFET
600 V, 22 A, 165 m Ω
? BV DSS > 650 V @ T J = 150 C
Features
o
? R DS(on) = 140 m Ω (Typ.) @ V GS = 10 V, I D = 11 A
? Ultra Low Gate Charge (Typ. Q g = 45 nC)
? Low Effective Output Capacitance (Typ. C oss(eff.) = 196.4 pF)
? 100% Avalanche Tested
? RoHS Compliant
Application
Description
The SupreMOS ? MOSFET is Fairchild Semiconductor ’s next
generation of high voltage super-junction (SJ) technology
employing a deep trench filling process that differentiates it from
the conventional SJ MOSFETs. This advanced technology and
precise process control provides lowest Rsp on-resistance,
superior switching performance and ruggedness. SupreMOS
MOSFET is suitable for high frequency switching power con-
verter applications such as PFC, server/telecom power, FPD TV
power, ATX power, and industrial power applications.
? PDP TV
? Solar Inverter
? AC-DC Power Supply
D
G
G
D
S
TO-3PN
S
MOSFET Maximum Ratings T C = 25
o
C unless otherwise noted.
Symbol
V DSS
Drain to Source Voltage
Parameter
FCA22N60N
600
Unit
V
V GSS
I D
Gate to Source Voltage
Drain Current
- Continuous (T C = 25 o C)
- Continuous (T C = 100 o C)
±30
22
13.8
V
A
I DM
Drain Current
- Pulsed
(Note 1)
66
A
E AS
I AR
E AR
dv/dt
P D
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
(T C = 25 o C)
- Derate Above 25 o C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
672
7.3
2.75
100
20
205
1.64
mJ
A
mJ
V/ns
W
W/ o C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
-55 to +150
300
o
o
C
C
Thermal Characteristics
Symbol
Parameter
FCA22N60N
Unit
R θ JC
R θ JA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
0.61
40
o
C/W
?2009 Fairchild Semiconductor Corporation
FCA22N60N Rev. C1
1
www.fairchildsemi.com
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